2018年12月 - 至今 beat365，副教授

2015年5月 - 2018年10月 荷蘭萊頓大學化學所，Veni學者

2014年10月 - 2015年4月 德國于利希研究中心，洪堡學者

2009年8月 - 2014年9月 瑞士巴塞爾大學物理系，博士後

目前擔任Nature Commun.、Nano Lett.、Adv. Mater.、Phys. Rev. Appl.、Biosensors、IEEE等期刊審稿人。  

納電子生物化學傳感器

高靈敏單分子檢測

功能化納電子器件

主要從事利用新材料、新原理開發生物化學傳感器及功能化納電子器件的研究工作。至今在Science子刊Sci. Adv.、Nat. Commun.、Nano Lett.、Adv. Mater.、Nanoscale、APL等國際學術刊物上發表論文50餘篇，總計被引用1200餘次。利用等電荷點和倍頻放大原理檢測微弱生物信号、利用高頻突破Debye屏蔽等研究成果，受到衆多學術媒體的關注及國内外學者的廣泛引用。

2015年 荷蘭Veni基金

2015年 瑞士APM學者

2014年 德國洪堡學者

代表性學術成果

1.L. Jiang, W. Fu (co-first author), Y. Y. Birdja, M. T. M. Koper, and G. F. Schneider,* “Quantum and electrochemical interplays in hydrogenated graphene”, Nat. Commun. 2018, 9, 793.

2.W. Fu,* L. Feng, G. Panaitov, D. Kireev, D. Mayer, A. Offenhäusser, and H.-J. Krause, “Biosensing near the neutrality point of graphene”, Sci. Adv. 2017, 3, e1701247.

3.W. Fu, T. F. van Dijkman, L. Lima, F. Jiang, G. F. Schneider, and E. Bouwman, “Ultrasensitive ethene detector based on a graphene-copper(I) hybrid material”, Nano Lett. 2017, 10.1021/acs.nanolett.7b04466.

4.D. Kireev, M. Brambach, S. Seyock, V. Maybeck, W. Fu, B. Wolfrum, and A. Offenhäusser, “Graphene transistors for interfacing with cells: towards a deeper understanding of liquid gating and sensitivity”, Sci. Rep. 2017, 7, 6658.

5.W. Fu,* L. Feng, D. Mayer, G. Panaitov, D. Kireev, A. Offenhäusser, and H.-J. Krause, “Electrolyte-gated graphene ambipolar frequency multipliers for biochemical sensing”, Nano Lett. 2016, 16, 2295.

6.W. Fu, L. Jiang, E. van Geest, L. Lima, and G. F. Schneider,* “Sensing at the surface of a graphene field-effect transistor”, Adv. Mater. 2016, 10.1002/adma.201603610.

7.W. Fu,* P. Makk, R. Maurand, M. Bräuninger, and C. Schönenberger,* “Large-scale fabrication of BN tunnel barriers for graphene spintronics”, J. Appl. Phys. 2014, 116, 074306.

8.W. Fu,* El M. Abbassi, T. Hasler, M. Jung, M. Steinacher, M. Calame, C. Schönenberger,* G. Puebla-Hellmann, S. Hellmüller, T. Ihn, and A. Wallraff, “Electrolyte gate dependent high-frequency measurement of graphene FETs for sensing applications”, Appl. Phys. Lett. 2014, 104, 013102.

9.R. Pantelic,* W. Fu (co-first author), C. Schönenberger, H. Stahlberg, “Rendering graphene supports hydrophilic with non-covalent aromatic functionalization for transmission electron microscopy”, Appl. Phys. Lett. 2014, 104, 134103.

10.W. Fu, C. Nef, A. Tarasov, M. Wipf, R. Stoop, O. Knopfmacher, M. Weiss, M. Calame, and C. Schönenberger,* “High mobility graphene ion-sensitive field-effect transistors by noncovalent functionalization”, Nanoscale 2013, 5, 12104.

11.X. Zhang, W. Fu, C. Palivan,* W. Meier,* “Natural channel protein inserts and functions in a completely artificial, solid-supported bilayer membrane”, Sci. Rep. 2013, 3, 2196.

12.F. Valmorra,* G. Scalari,* C. Maissen, W. Fu, C. Schönenberger, J. W. Choi, H. G. Park, M. Beck, and J. Faist,* “Low-Bias active control of terahertz waves by coupling large-area CVD graphene to a terahertz metamaterial”, Nano Lett. 2013, 13, 3193.

13.W. Fu, C. Nef, O. Knopfmacher, A. Tarasov, M. Weiss, M. Calame, and C. Schönenberger,* “Graphene transistors are insensitive to pH changes in solution”, Nano Lett. 2011, 11, 3597.

14.W. Fu, S. Y. Qin, L. Liu, T. H. Kim, S. Hellstrom, W. L. Wang,* W. J. Liang, X. D. Bai, A. P. Li,* and E. G. Wang,* “Ferroelectric Gated Electrical Transport in CdS Nanotetrapods”, Nano Lett. 2011, 11, 1913.

15.W. Fu, Z. Xu, X. D. Bai,* C. Z. Gu, and E. G. Wang,* “Intrinsic memory function of carbon nanotube-based ferroelectric field-effect transistor”, Nano Lett. 2009, 9, 921.

16.W. Fu, L. Liu, X. D. Bai,* and E. G. Wang,* “Two-bit ferroelectric field-effect transistor memories assembled on individual nanotubes”, Nanotechnology 2009, 20, 475305.

17.W. Fu, Z. Xu, K. H. Liu, W. L. Wang, X. D. Bai,* and E. G. Wang,* “Nanowire field-effect transistor with Bi1.5Zn1.0Nb1.5O7 dielectric”, Appl. Phys. Lett. 2008, 93, 213107.

18.W. Fu, H. Wang, L. Z. Cao, and Y. L. Zhou,* “Bi1.5Zn1.0Nb1.5O7/Mn-doped Ba0.6Sr0.4TiO3 heterolayered thin films with enhanced performance”, Appl. Phys. Lett. 2008, 92, 182910.

19.W. Fu, L. Z. Cao, S. F. Wang, Z. H. Sun, B. L. Cheng, Q. Wang, and H. Wang,* “Dielectric properties of Bi1.5Zn1.0Nb1.5O7/Mn-doped Ba0.6Sr0.4TiO3 heterolayered films grown by pulsed laser deposition”, Appl. Phys. Lett. 2006, 89, 132908.