2002-至今, 清華大學材料學（系）院

1996-1999, 講師, 中南大學材料系

中國真空學會理事

功能薄膜材料界面效應，存儲、記憶與學習效應，材料的摻雜技術與理化性質。

近年主要從事類腦計算材料與器件研究，采用無機、有機的憶阻器（memristor）材料構造人工神經突觸和纖維結構，模拟突觸的可塑性、研究其産生機理。柔性電子材料與器件，可穿戴設備與材料。

任職以來發表SCI論文超過200篇，SCI他引超過5000次，H因子43；授權國家發明專利26項；獲國家自然科學二等獎（第二）、國家技術發明二等獎（第三）、國家科技進步二等獎（第六）各1項，獲2009年教育部新世紀人才計劃支持。

代表性論文

1. Wan, Q; Zeng, F; Lu, Z; et al., Polymorphic signal responses of phase-change quantum dot string upon stochastic resonance, Nano Research, 2025, 18, 94907088.

2. Lu, Z; Zeng, F; Ma, D; et al., Modulation of phase-locking characteristics of NbOx memristor by Ag-doping, ACS Applied Materials & Interfaces 2024, 16(44), 60501-60510.

3. Wan, Q; Zeng, F; Lu, Z; Yu, JW; Chen, TJ; Pan, F, Adaptive Signal Modulation Evolved by the Inherent Nonlinearity of Phase-Change Quantum-Dot String, Nano Letters 2024, 24(26), 8089-8097.

4. Yu, JW; Zeng, F; Wan, Q; et al., Emulation of auditory senses depending on chaotic dynamics of threshold switching memristor, InfoMat 2023, 5)10), e12458.

5. Wan, Q; Zeng, F; Yu, JW; et al., Local Activity in a Self-Assembled Quantum Dot System, Advanced Quantum Technologies 2023, 6(6), 2300021.

6. Yu, JW; Zeng, F; Wan, Q; et al., Memristive structure of Nb/HfOx/Pd with controllable switching mechanisms to perform featured actions in neuromorphic networks, Nano Research 2022, 15 (9), 8410-8418.

7. Wan, Q; Zeng, F; Sun, YM, et al., Memristive Behaviors Dominated by Reversible Nucleation Dynamics of Phase-Change Nanoclusters, Small 2022, 18(11), 2105070.

8. Wan, Q; Zeng, F; Yin, J; et al., Phase-change Nano-clusters Embedded Memristor for Simulating Synaptic Learning. Nanoscale 2019, 11, 5684-5692.

9. Yin, J; Zeng, F; Wan, Q; et al., Adaptive Crystallite Kinetics in Homogenous Bilayer Oxide Memristor for Emulating Diverse Synaptic Plasticity. Adv. Funct. Mater. 2018, 28, 1706927.

10. Hu, YD; Zeng, F; Chang, CT; et al., Diverse Synaptic Plasticity Induced by Interplay of Ionic Polarization and Doping at Salt-Doped Electrolyte/Semiconducting Polymer Interface. ACS Omega 2017, 2, 746-754.

11. Chang, CT; Zeng, F; Li, XJ; et al., Spatial summation of the short-term plasticity of a pair of organic heterogeneous junctions. RSC Adv. 2017, 7, 4017.

12. Chang, CT; Zeng, F; Li, XJ; et al., Simulation of synaptic short-term plasticity using Ba(CF3SO3)2-doped polyethylene oxide electrolyte film. Sci. Rep. 2016, 5, 18915.

13. Dong, WS; Zeng, F; Lu, SH; et al., Frequency-dependent learning achieved using semiconducting polymer/electrolyte composite cells. Nanoscale 2015, 7, 16880 - 16889.

14. Tang, GS; Zeng, F; Chen, C; et al., Programmable complementary resistive switching behaviours of a plasma-oxidised titanium oxide nanolayer. Nanoscale 2013, 5, 422-428.

15. Gao, S; Zeng, F; Li, F; et al., forming-free and self-rectifying resistive switching of the simple Pt/TaOx/n-Si structure for access device-free high-density memory application. Nanoscale 2015, 7, 6031-6038.

16. Li, SZ; Zeng, F; Chen, C; et al., Synaptic plasticity and learning behaviours mimicked through Ag interface movement in an Ag/conducting polymer/Ta memristive system. J. Mater. Chem. C 2013, 1, 5292-5298.

17. Wang, ZS; Zeng, F; Yang, J; et al., Resistive switching induced by metallic filaments formation through poly (3, 4-ethylene-dioxythiophene): poly (styrenesulfonate). ACS Appl. Mater. & Interfaces 2012, 4, 447-453.

18. Zeng, F; Li, SZ; Yang, J; et al., Learning processes modulated by the interface effects in a Ti/conducting polymer/Ti resistive switching cell. RSC Adv. 2014, 4, 14822.

19. Chen, C; Gao, S; Zeng, F; et al., Conductance quantization in oxygen-anion-migration-based resistive switching memory devices. Appl. Phys. Lett. 2013, 103, 043510.

20. Gao, S; Zeng, F; Wang, MJ; et al., Implementation of Complete Boolean Logic Functions in Single Complementary Resistive Switch. Sci. Rep. 2015, 5, 15467.